Bias Resistor Transistors - LRC
Description
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
With Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.
The BRT eliminates these individual components by integrating them into a single device.
The use of a BRT can reduce both system cost and board space.
The device is housed in the SOT-723 package which is designed for low power surface mount applications.
ƽSimplifies Circuit Design ƽReduces Board Space ƽReduces Component Count ƽThe SOT-723 Package can be Soldered using Wave or Reflow.
ƽAvailable in 4 mm, 8000 Unit Tape & Reel ƽThese are Pb-Free Devices.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Collector Current
IC
THERMAL CHARACTERISTICS
50 50 100
Characteristic
Symbol
Max
Total Device Dissipation
TA = 25°C Derate above 25°C
PD 260 (Note 1) 600 (Note 2)
2.
0 (Note 1)
4.
8 (Note 2)
Thermal Resistance – Junction-to-Ambient
RθJA
480 (Note 1) 205 (Note 2)
Junction and Storage Temperature Range
TJ, Tstg –55 to +150
1.
FR–4 @ Minimum Pad 2.
FR–4 @ 1.
0 x 1.
0 inch Pad
Unit Vdc Vdc mAdc
Unit mW mW/°C
°C/W
°C
LDTA114EM3T5G Series
3
1 SOT-723
2
PIN 1 BASE (INPUT)
R1 R2
PIN 3 COLLECTOR (OUTPUT)
PIN 2 EMITTER (GROUND)
MARKING DIAGRAM 3
XX M
12 xx = Specific Device Code M = Date Code
Version 1.
0
LDTA114EM3T5G_S-1/11
LESHAN RADIO COMPANY, LTD.
ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
LDTA114EM3T5G LDTA124EM3T5G LDTA144EM3T5G LDTA114YM3T5G LDTA114TM3T5G LDTA143TM3T5G LDTA123EM3T5G LDTA143EM3T5G LDTA143ZM3T5G LDTA124XM3T5G LDTA123JM3T5G LDTA115EM3T5G LDTA144WM3T5G
6A 10 6B 22 6C 47 6D 10 6E 10 6F 4...
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