SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS - Zetex Semiconductors
Description
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 JANUARY 1996 FEATURES
7
FMMTA55 FMMTA56
* Gain of 50 at IC=100mA
PARTMARKING DETAIL -
FMMTA55 - 2H FMMTA56 - 2G FMMTA55R - NB FMMTA56R - MB
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg
E C
B
SOT23
FMMTA55 FMMTA56 -60 -80 -60 -80 -4 -500 330 -55 to +150
UNIT V V V mA
mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
FMMTA55 FMMTA56
PARAMETER
SYMBOL MIN.
MAX.
MIN.
MAX.
UNIT CONDITIONS.
Collector-Emitter
V(BR)CEO -60
-80
V IC=-1mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO -4
-4
V IE=-100µA, IC=0
Breakdown Voltage
Collector-Emitter Cut-Off Current
ICES
-0.
1 -0.
1 µA VCE=-60V
Collector-Base Cut-Off Current
ICBO
Static Forward
hFE
Current Transfer Ratio
Collector-Emitter
VCE(sat)
Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(on)
50 50
-0.
1 -0.
25
50 50
-1.
2
-0.
1 µA
-0.
25 V -1.
2 V
VCB=-80V, IE=0 VCB=-60V, IE=0 IC=-10mA, VCE=1V* IC=-100mA, VCE=1V* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-1V*
Transition Frequency
fT 100 100 MHz IC=-10mA, VCE=-2V f=100MHz
*Measured under pulsed conditions.
Pulse width=300µs.
Duty cycle ≤2%
3 - 177
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