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B1116A

Part Number	B1116A
Manufacturer	JCST
Description	PNP Transistor
Published	Apr 15, 2015
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TRANSISTOR (PNP)...
Datasheet	B1116A PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TRANSISTOR (PNP) TO-92 FEATURES · High Collector Power Dissipation .
· Complementary to 2SD1616/2SD1616A 1.
EMITTER 2.
COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3.
BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage 2SB1116 2SB1116A -60 -80 V VCEO Collector-Emitter Voltage 2SB1116 2SB1116A -50 -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.
75 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Para...

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