PNP Transistor - JCST
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-92 Plastic-Encapsulate Transistors
2SB1116/1116A TRANSISTOR (PNP)
TO-92
FEATURES · High Collector Power Dissipation .
· Complementary to 2SD1616/2SD1616A
1.
EMITTER 2.
COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3.
BASE
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage 2SB1116 2SB1116A
-60 -80
V
VCEO
Collector-Emitter Voltage 2SB1116 2SB1116A
-50 -60
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current -Continuous
-1 A
PC Collector Power Dissipation
0.
75 W
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100μA,IE=0
2SB1116 2SB1116A
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Base -emitter voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
CLASSIFICATION OF hFE(1)
Rank
L
V(BR)CEO
V(BR)EBO
ICBO
IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE
fT Cob ton ts tf
IC=-1mA,IB=0
2SB1116 2SB1116A
IE=-100μA,IC=0
VCB=-60V,IE=0
2SB1116
VCB=-80V,IE=0
2SB1116A
VEB=-6V,IC=0
VCE=-2V,IC=-0.
1A
VCE=-2V,IC=-1A
IC=-1A,IB=-50mA
IC=-1A,IB=-50mA
VCE=-2V,IC=-0.
05A
VCE=-2V,IC=-0.
1A
VCB=-10V,IE=0,f=1MHz
VCC=-10V,IC=-0.
1A,IB1=-IB2=-0.
01A, VBE(Off)=2to3V
K
Min -60 -80 -50 -60 -6
135 81
-0.
6 70
Range
135-270
200-400
Typ Max
-0.
1 -0.
1 600 -0.
3 -1.
2 -0.
7 25 0.
07 0.
7 0.
07
U 300-600
Unit
V
V V μA μA
V V V MHz pF us us us
A,May,2011
...
Similar Datasheet
