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MS1076

Part Number	MS1076
Manufacturer	Microsemi
Description	RF & MICROWAVE TRANSISTORS
Published	Apr 14, 2015
Detailed Description	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • 30 MHz • 28 VOLTS • GOLD METALLIZATION • POUT = 220 W PEP • GP...
Datasheet	MS1076 PDF File

Overview

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • 30 MHz • 28 VOLTS • GOLD METALLIZATION • POUT = 220 W PEP • GP = 12 dB GAIN MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications.
This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability.
MS1076 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VEBO IC PDISS TJ TSTG Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction - Case Thermal Res...

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