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2SK4113

Part Number	2SK4113
Manufacturer	Toshiba
Description	Silicon N-Channel MOSFET
Published	Apr 14, 2015
Detailed Description	2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK4113 Switching Regulator Applications ...
Datasheet	2SK4113 PDF File

Overview

2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK4113 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.
0 (typ.
) • High forward transfer admittance: |Yfs| = 4.
5 S (typ.
) • Low leakage current: IDSS = 100 A (VDS = 720 V) • Enhancement mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Chann...

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