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K2467

Toshiba
Part Number K2467
Manufacturer Toshiba
Description 2SK2467
Published Apr 14, 2015
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2467 2SK2467 High-Power Amplifier Application • High bre...
Datasheet PDF File K2467 PDF File

K2467
K2467

Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2467 2SK2467 High-Power Amplifier Application • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 4.
0 S (typ.
) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VGSS ID PD Tch Tstg 180 ±20 9 80 150 −55 to 150 V V A W °C °C Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the sig...


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