DatasheetsPDF.com

IPD50N03S4L-06

Part Number	IPD50N03S4L-06
Manufacturer	Infineon
Description	Power Transistor
Published	Apr 14, 2015
Detailed Description	OptiMOS®-T2 Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak refl...
Datasheet	IPD50N03S4L-06 PDF File

Overview

OptiMOS®-T2 Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPD50N03S4L-06 Product Summary V DS R DS(on),max ID 30 V 5.
5 mW 50 A PG-TO252-3-11 Type IPD50N03S4L-06 Package Marking PG-TO252-3-11 4N03L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=50A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipa...

Similar Datasheet

IPD50N03S4L-06 Power Transistor - Infineon

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)