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IPD49CN10NG

Infineon
Part Number IPD49CN10NG
Manufacturer Infineon
Description Power Transistor
Published Apr 14, 2015
Detailed Description OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very lo...
Datasheet PDF File IPD49CN10NG PDF File

IPD49CN10NG
IPD49CN10NG

Overview
OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G Product Summary V DS R DS(on),max (TO252) ID 100 V 49 mΩ 20 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G Package Marking PG-TO263-3 50CN10N PG-TO252-3 49CN10N PG-TO262-3 50CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous dr...


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