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BD633

Part Number	BD633
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Apr 7, 2015
Detailed Description	isc Silicon NPN Power Transistor BD633 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Br...
Datasheet	BD633 PDF File

Overview

isc Silicon NPN Power Transistor BD633 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.
)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.
) ·Complement to Type BD634 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Ju...

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