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D458

Part Number	D458
Manufacturer	Inchange Semiconductor
Description	2SD458
Published	Apr 4, 2015
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD458 DESCRIPTION ·Collector-Emitt...
Datasheet	D458 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD458 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ APPLICATIONS ·Designed for high power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCER Collector-Emitter Voltage RBE= 50Ω VCEO Collector-Emitter Voltage 600 V 600 www.
DataSheet.
co.
kr V 400 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 2A IBM Base Current-Peak PC Collector Power Dissipation @TC=25...

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