SILICON PLANAR EPITAXIAL TRANSISTORS - DAIWA
Description
MBT2222 MBT2222A
MBT222/MBT222A
SILICON PLANAR EPITAXIAL TRANSISTORS
N-P-N TRANSISTORS
13
ABSOLUTE MAXIMUM RATINGS
Descriptions Storage Temperature Junction Temperature Maximum Power Dissipation (Ta=25 C) Maximum Collector to Base Voltage Maximum Collector to Emitter Voltage Maximum Emitter to Base Voltage Maximum Collector Current
Symbol
Tstg Tj Ptot VCBO VCEO VEBO IC
Min.
55
Typ.
Max.
Unit 150 C 150 C 250 mW 60/75 V 30/40 V
5.
0/6.
0 V 600 mA
ELECTRICAL CHARACTERISTICS (Ta 25C)
2
1.
BASE 3.
EMITTER 2.
COLLECTOR
Type Color Code Marking
SOT-23 Black MBT222/MBT222A
Descriptions
DC Current Gain
Gain Bandwidth product Output Capacitance Input Capacitance
(MBT222) Collector Cut-off Current (MBT222A)
(MBT222A) Emitter Cut-off Current (MBT222A) Base Current (MBT222A) Collector Saturation Voltage
Base Saturation Voltage
Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Delay Time Rise Time Fall Time Storage Time Small Signal Current Gain
Pulse Test 300 S, Duty Cycle.
2%
Test Conditions
VCE 10V, IC 0.
1mA
VCE 10V, IC 1mA
VCE 10V, IC 10mA
VCE 10V, IC 150mA
VCE 1V, IC 150mA
VCE 10V, IC 500mA
VCE V, IC mA
VCB V, IE mA, f MHz
VCE V, IC mA, f MHz
VCB 50V, I E 0mA
VCB 60mA, IE 0mA
VEB V, VEB V
IC 0,
VEB 3V
VEB 3V, VCE 60V
IC 150mA, IB 15mA
IC 500mA, IB 50mA
I C 150mA, IB 15mA,
IC 500mA, IB 50mA
IC 1.
0mA IC 0
IC 100mA, IB 0
IC 0mA, IE 10uA
IC 150mA
IC 150mA
IC 150mA
IC 150mA
VCE 10V, IC 1.
0mA, f 1kHz
VCE 10mA, IC 10mA, f 1kHz
Symbol
hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 fT Cob C ib ICBO ICBO ICEX I EBO I BEX V CE(Sat) V CE(Sat) V BE(Sat) V BE(Sat)
BVCEO BVCEO
BVEBO td tf tf t stg hFE hFE
Min.
35 50 75 100 50 30/40 250/300
30/40 60/75 5.
0/6.
0
50 75
Typ.
Max.
Unit
300
8.
0 30/25 0.
01 0.
01 10 10 20 400/300 1.
6/1.
0 1.
3/0.
6to1.
2 2.
6/2.
0
10 25 60 225 300 375
MHz PF PF uA uA nA nA nA mV V V V
V V V ns ns ns ns
THERMAL CHARACTERISTICS
Descriptions Thermal Resistance at Tj P(Rth j-t+Rth t-s+Rth s-a) +Tamb
Symbol R th j-a
Min.
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