NPN 100mA 50V Digital Transistors - Rohm
Description
DTC114G series
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
Parameter VCEO IC R
Value 50V 100mA 10kΩ
lFeatures
1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) .
lOutline
SOT-323
SOT-346
DTC114GU3
DTC114GKA
(UMT3)
(SMT3)
lInner circuit
4) Complementary PNP Types: DTA114G series 5) Lead Free/RoHS Compliant.
lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
Part No.
Package
Package size
Taping code
Reel size Tape width (mm) (mm)
Basic ordering unit.
(pcs)
Marking
DTC114GU3
SOT-323 (UMT3)
2021
T106
180
8
3000
K24
DTC114GKA
SOT-346 (SMT3)
2928
T146
180
8
3000
K24
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20171222 - Rev.
002
DTC114G series
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
DTC114GU3 DTC114GKA
Junction temperature
Range of storage temperature
Datasheet
Symbol VCBO VCEO VEBO IC
PD*1
Tj Tstg
Values 50 50 5 100 200 200 150
-55 to +150
Unit V V V mA
mW
℃ ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown voltage
BVCBO IC = 50μA
Collector-emitter breakdown voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Collector-emitter saturation voltage
DC current gain Emitter-base resistance
BVEBO ICBO IEBO VCE(sat) hFE R
IE = 720μA VCB = 50V VEB = 4V
IC = 10mA, IB = 0.
5mA
VCE = 5V, IC=5mA -
Transition frequency
f
*2 T
VCE = 10V, IE = -5mA, f = 100MHz
*1 Each terminal mounted on a reference land.
Values Unit
...
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