STACK SILICON DIFFUSED DIODE - KEC
Description
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES Average Forward Current : IO=30A.
Repetitive Peak Reverse Voltage : VRRM=200V.
POLARITY E30A2CS (+ Type) E30A2CR (- Type)
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Repetitive Peak Reverse Voltage Average Forward Current Peak 1 Cycle Surge Current Junction Temperature Storage Temperature Range
SYMBOL VRRM IF(AV) IFSM Tj Tstg
RATING 200 30
350 (50Hz) -40 150 -40 150
UNIT V A A
D2 H T D1 C1 B1 C2 B2
E30A2CS, E30A2CR
STACK SILICON DIFFUSED DIODE
A3 A2
D3 A1
E FG
DIM A1 A2 A3 B1 B2 C1 C2 D1
MILLIMETERS 10.
0 +_0.
3 13.
5 +_0.
3 24.
0 +_0.
5 8.
5 +_0.
3 10.
0 +_ 0.
3 2.
0 +_ 0.
3
5.
0 +_0.
3 2.
5+_ 0.
3
DIM D2 D3 E F G H T
MILLIMETERS 5.
0 +_0.
3 4.
5+_ 0.
3 1.
9+_ 0.
3 9.
0 +_0.
3 1.
0+_ 0.
3 4.
4+_ 0.
5
0.
6+_ 0.
3
MR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time Temperature Resistance
VFM IRRM
trr Rth
TEST CONDITION IFM=100A VRRM=200V IF=0.
1A, IR=0.
1A DC total junction to case
MIN.
-
TYP.
-
MAX.
1.
2 50 15 1.
0
UNIT V A S /W
2002.
10.
9
Revision No : 2
1/2
FORWARD CURRENT I F (A) AVERAGE FORWARD CURRENT I F(AV) (A)
E30A2CS, E30A2CR
I F - VF
1000
100
10
1 0.
7 0.
8 0.
9 1 1.
1 1.
2
FORWARD VOLTAGE V F (V)
I F(AV) - Ta
40 Ta=Tc
30
20
10
0 0 40 80 120 160 AMBIENT TEMPERATURE Ta ( C)
2002.
10.
9
Revision No : 2
2/2
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