IGW30N60T - Infineon
Description
IGW30N60T
TRENCHSTOP™ Series
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.
5V (typ.
) Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for : - Frequency Converters - Uninterruptible Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed
Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/
C G
E
PG-TO247-3
Type IGW30N60T
VCE 600V
IC VCE(sat),Tj=25°C Tj,max Marking Code
Package
30A
1.
5V
175C
G30T60 PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s
Symbol VCE
IC
ICpuls VGE
tSC
Ptot Tj Tstg -
Value 600
60 30 90 90 20
5
187 -40.
.
.
+175 -55.
.
.
+150
260
Unit V
A
V s W C
1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev.
2.
7 20.
09.
2013
IGW30N60T
TRENCHSTOP™ Series
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient
Symbol RthJC RthJA
Conditions
Max.
Value 0.
80 40
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage
Gate-emitter threshold v...
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