2SD837 - INCHANGE
Description
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD837
DESCRIPTION ·High DC Current Gain-
: hFE= 1000(Min.
)@IC= 3A ·High Switching Speed
APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICM Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
60 V
60 V
5V
4A
8A
40 W
150 ℃
-55~150
℃
isc website：www.
iscsemi.
cn
1
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD837
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
ICBO Collector Cutoff Current
VCB= 60V; IE= 0
ICEO Collector Cutoff Current IEBO Emitter Cutoff Current
VCE= 30V; IB= 0 VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.
5A ; VCE= 3V
hFE-2
DC Current Gain
Switching Times
IC= 3A ; VCE= 3V
ton Turn-On Time toff Turn-Off Time
IC= 3A; IB1= -IB2= 12mA
MIN TYP.
MAX UNIT
60 V
2V
4V
2.
5 V
0.
2 mA
0.
5 mA
2 μA
1000
1000
10000
0.
3 μs 4 μs
isc website：www.
iscsemi.
cn
2
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