Silicon NPN Triple Diffused Transistor - Renesas
Description
2SD1527
Silicon NPN Triple Diffused
Application
High voltage power amplifier
Outline
TO-220AB
ADE-208-913 (Z) 1st.
Edition
September 2000
1 23
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation
Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC PC PC * 1 Tj Tstg
1.
Base 2.
Collector
(Flange) 3.
Emitter
Rating 1000 1000 5 0.
5 1.
8 25 150 –55 to +150
Unit V V V A W W °C °C
Free Datasheet http://www.
datasheet4u.
com/
2SD1527
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO voltage
1000
Emitter to base breakdown voltage
V(BR)EBO
5
Collector cutoff current DC current transfer ratio
Base to emitter voltage Collector to emitter saturation voltage
I CBO hFE1 hFE2 VBE VCE (sat)
— 10 10 — —
Gain bandwidth product Collector output capacitance
fT Cob
— —
Typ —
—
— — — — —
5 5
Max —
Unit V
Test conditions IC = 1 mA, RBE = ∞
—V
IE = 1 mA, IC = 0
10 µA — — 1.
2 V 5V
VCB = 800 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 100 mA VCE = 5 V, IC = 100 mA IC = 300 mA, IB = 60 mA
— MHz VCE = 20 V, IC = 50 mA — pF VCB = 100 V, IE = 0, f = 1 MHz
Collector power dissipation Pc (W) Collector current IC (A)
Maximum Collector Dissipation Curve 30
20
10
0 50 100 150 Case temperature TC (°C)
Area of Safe Operation
1.
0 (50 V, 0.
5 A)
TC = 25°C
P C = 25 W
0.
1 DC Operation
(600 V, 0.
042 A)
0.
01 30
(1,000 V, 0.
015 A)
100 300 1,000 3,000 Collector to emitter voltage VCE (V)
Free Datasheet http://www.
datasheet4u.
com/
Base to emitter saturation voltage VBE (sat) (V)
Base to Emitter Saturation Voltage vs.
Collector Current
2 IC/IB = 10 Ta = 25°C Pulse test
1
2SD1527
0 12
5 10 20 50 100 200 500
Collector current IC (mA)
DC Current Transfer Ratio vs.
Collector Current
100 TC = 25°C
VCE = 10 V 30
VCE = 5 V 10
3
12
5 10 20
50 100 200 500
Collector cur...
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