Fast S-IGBT in NPT-technology - Infineon
Description
SGP20N60 SGB20N60, SGW20N60
Fast S-IGBT in NPT-technology
• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs • Designed for:
- Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
C G
E
Type SGP20N60 SGB20N60 SGW20N60
VCE IC VCE(sat) Tj Package
600V 20A
2.
4V
150°C TO-220AB
TO-263AB
TO-247AC
Maximum Ratings
Parameter
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 20 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature
Symbol VCE IC
ICpuls -
VGE EAS
tSC Ptot Tj , Tstg
Ordering Code Q67041-A4712-A2 Q67041-A4712-A4 Q67040-S4236
Value 600
40 20 80 80
±20 115
Unit V A
V mJ
10 179 -55.
.
.
+150
µs W °C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Mar-00
SGP20N60 SGB20N60, SGW20N60
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient
Symbol RthJC RthJA
Conditions TO-247AC
Max.
Value 0.
7 40
Unit K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage Collector-emitter saturation voltage
Gate-emitter threshold voltage Zero gate voltage collector current
Gate-emitter leakage current Transconductance Dynamic Characteristic
V(BR)CES VCE(sat)
VGE(th) ICES
IGES gfs
VGE=0V, IC=500µA VGE = 15V, IC=20A Tj=25°C Tj=150°C IC=700µA,VCE=VGE VCE=600V,VGE=0V Tj=25°C Tj=150°C VCE=0V,VGE=20V VCE=20V, IC=20A
Input capacitance Output capacitance Reverse t...
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