2SC4497 - Toshiba
Description
2SC4497
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC4497
High Voltage Control Applications
Unit: mm
• High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.
5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.
) • Complementary to 2SA1721
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
300
V
300
V
6
V
100
mA
20
mA
200
mW
150
°C
−55 to 150
°C
JEDEC JEITA
TO-236MOD SC-59
Note: Using continuously under heavy loads (e.
g.
the application of high
TOSHIBA
2-3F1A
temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the
Weight: 0.
012 g (typ.
)
reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1988-09
1
2014-03-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
ICBO
VCB = 300 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V(BR) CBO IC = 0.
1 mA, IE = 0
V(BR) CEO IC = 1 mA, IB = 0
hFE (1) (Note)
VCE = 10 V, IC = 20 mA
hFE (2) VCE = 10 V, IC = 1 mA
VCE (sat) IC = 20 mA, IB = 2 mA
VBE (sat) IC = 20 mA, IB = 2 mA
fT
VCE =...
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