60V N-Channel MOSFET - ark
Description
60V N-Channel MOSFET
General Features
¾ Low ON Resistance ¾ Low Gate Charge (typical 20nC) ¾ Fast Switching ¾ 100% Avalanche Tested ¾ Optimized Bvdss Capability ¾ RoHS Compliant ¾ Halogen-free available
BVDSS 60V
FTP18N06N
RDS(ON) (Max.
) 18m
ID 68A
Applications
¾ Power Supply ¾ DC-DC Converters
Ordering Information
Part Number Package
FTP18N06N
TO-220
Marking
FTP18N06N
Absolute Maximum Ratings
specified
Symbol
Parameter
VDSS
Drain-to-Source Voltage[1]
ID Continuous Drain Current IDM Pulsed Drain Current, VGS@10V[2]
Power Dissipation PD Derating Factor above 25ć
TC=25ć unless otherwise
FTP18N06N 60 68 272 115 0.
77
Unit V
A
W W/ć
VGS EAS dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy L=11.
9 ID=5.
5A Peak Diode Recovery dv/dt[3]
±20 V 360 mJ 4.
5 V/ns
TL
Soldering Temperature Distance of 1.
6mm from case for 10 seconds
300
TJ and TSTG Operating and Storage Temperature Range
-55 to 175
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the ³$EVROXWH0D[LPXP5DWLQJV´PD\FDXVHSHUPDQHQWGDPDJHWRWKHGHYLFH
ć
Thermal Characteristics
Symbol
Parameter
Rș-& Thermal Resistance, Junction-to-Case Rș-$ Thermal Resistance, Junction-to-Ambient
FTP18N06N 1.
3 62
Unit ć/W
ARK Microelectronics Co.
, Ltd.
w w w.
a r k - m i c r o.
c o m 1/7
Rev.
2.
0 Mar.
2011
FTP18N06N
Electrical Characteristics
OFF Characteristics
Symbol
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Leakage Current
Min.
60 -----
Typ.
------
Max.
-1.
0 100 100
-100
TJ =25ć unless otherwise specified
Unit Test Conditions
V VGS=0V, ID=250µA
VDS=48V VGS=0V µA VDS=48V, VGS=0V,
TJ=125ć VGS=+20V nA VGS=-20V
ON Characteristics
Symbol
Parameter
RDS(ON) Static Drain-to-Source On-Resistance
VGS(TH) Gate Threshold Voltage gfs Forward Transconductance
Min.
--
2.
0 --
Typ.
12.
5
---
Max.
18 4.
0 --
TJ =25ć unless otherwise specified
Unit Test Conditions ...
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