N-Channel Trench MOSFET - IPS
Description
FTP18N06N
N-Channel Trench MOSFET
Applications:
•Automotive •DC Motor Control •Class D Amplifier
Features:
• RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves
Ordering Information
PART NUMBER FTP18N06N
PACKAGE TO-220
BRAND FTP18N06N
Pb Lead Free Package and Finish
VDSS 60V
RDS(ON) (Max.
) 18 mΩ
ID 55A
D
GDS
Package Not to Scale
G S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
Maximum
Units
VDSS ID ID@ 100 oC IDM
PD
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 oC
(NOTE *1) (NOTE *2)
60 55 Figure 3 Figure 6 130 0.
87
V
A
W W/ oC
VGS EAS
IAS dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy L=10 mH, ID=8.
0 Amps Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 20 320
Figure 8 3.
0
V mJ
V/ ns
TL TPKG
TJ and TSTG
Maximum Temperature for Soldering Leads at 0.
063in (1.
6mm) from Case for 10 seconds Package Body for 10 seconds
Operating Junction and Storage Temperature Range
300 260
-55 to 175
oC
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient
©2008 InPower Semiconductor Co.
, Ltd.
Maximum 1.
15 62
Page 1 of 9
Units oC/W
Test Conditions
Drain Lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +175oC.
1 cubic foot chamber, free air.
FTP18N06N REV.
A.
May.
2008
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
BVDSS
Drain-to-Source Breakdown Voltage
ΔBVDSS/Δ TJ
BreakdownVoltage Temperature Coefficient, Figure 11.
60 --- 0.
71
---
-- -- 25
IDSS Drain-to-Source Leakage Current -- -- 250
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
-- -- 100 -- -- -100
Un...
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