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NE85619-T1-A

CEL
Part Number NE85619-T1-A
Manufacturer CEL
Description NPN SILICON EPITAXIAL TRANSISTOR
Published Mar 14, 2015
Detailed Description SILICON TRANSISTOR NE85619 / 2SC5006 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD D...
Datasheet PDF File NE85619-T1-A PDF File

NE85619-T1-A
NE85619-T1-A

Overview
SILICON TRANSISTOR NE85619 / 2SC5006 JEITA Part No.
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band.
Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique.
+0.
1 –0 0.
3 +0.
1 –0.
05 FEATURES • Low Voltage Use.
• High fT : 4.
5 GHz TYP.
(@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Low Cre : 0.
7 pF TYP.
(@ VCE = 3 V, IE = 0, f = 1 MHz) • Low...


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