DatasheetsPDF.com

NE85619

CEL
Part Number NE85619
Manufacturer CEL
Description NPN SILICON EPITAXIAL TRANSISTOR
Published Mar 14, 2015
Detailed Description SILICON TRANSISTOR NE85619 / 2SC5006 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD D...
Datasheet PDF File NE85619 PDF File

NE85619
NE85619

Overview
SILICON TRANSISTOR NE85619 / 2SC5006 JEITA Part No.
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band.
Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique.
+0.
1 –0 0.
3 +0.
1 –0.
05 FEATURES • Low Voltage Use.
• High fT : 4.
5 GHz TYP.
(@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Low Cre : 0.
7 pF TYP.
(@ VCE = 3 V, IE = 0, f = 1 MHz) • Low NF : 1.
2 dB TYP.
(@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • High |S21e|2: 9 dB TYP.
(@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Ultra Super Mini Mold Package.
ORDERING INFORMATION PART NUMBER NE85619-A 2SC5006-A NE85619-T1-A 2SC5006-T1-A QUANTITY 50 pcs.
/Unit 3 kpcs.
/Reel PACKING STYLE Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side of the tape.
(Pb-Free) To order evaluation samples, please contact your nearby sales office.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage VCBO 20 Collector to Emitter Voltage VCEO 12 Emitter to Base Voltage VEBO 3.
0 Collector Current IC 100 Total Power Dissipation PT 125 Junction Temperature Tj 150 Storage Temperature Tstg –60 to +150 V V V mA mW ˚C ˚C 0.
75 ± 0.
05 0.
6 0 to 0.
1 1.
6 ± 0.
1 1.
0 0.
5 0.
5 0.
2–+00.
1 PACKAGE DIMENSIONS in millimeters 1.
6 ± 0.
1 0.
8 ± 0.
1 2 3 1 1.
Emitter 2.
Base 3.
Collector 0.
15 Document No.
P10385EJ2V0DS00 (2nd edition) (Previous No.
TD-2399) Date Published July 1995 P NE85619 / 2SC5006 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF MIN.
80 3.
0 7.
0 TYP.
4.
5 0.
7 9.
0 1.
2 MAX.
1.
0...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)