N-Channel MOSFET - Matsuki
Description
N-Channel 100-V (D-S) MOSFET
ME06N10/ME06N10-G
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON)≦200mΩ@VGS=10V ● RDS(ON)≦260mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(TO-252-3L) Top View
Ordering Information: ME06N10 (Pb-free) ME06N10-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current
TC=25℃ TC=70℃
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation
TC=25℃ TC=70℃
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance-Junction to Case*
* The device mounted on 1in2 FR4 board with 2 oz copper
RθJC
Maximum Ratings
100 ±20 7.
2 5.
7 28.
8 16.
6 10.
6 -55 to 150 7.
5
Unit V V
A
A
W
℃ ℃/W
Dec, 2013 Ver1.
0
01
ME06N10/ME06N10-G
N-Channel 100-V (D-S) MOSFET
Electrical Characteristics (TC =25℃ Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC BVDSS VGS(th) IGSS IDSS
RDS(ON)
VSD
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current
Drain-Source On-Resistance a
Diode Forward Voltage
VGS=0V, ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=±20V VDS=100V, VGS=0V VGS=10V, ID= 3A VGS=4.
5V, ID=1A IS=6.
5A, VGS=0V
100 V
1 3V
±100 nA
1 μA
160 200 ...
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