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C2979

Hitachi Semiconductor
Part Number C2979
Manufacturer Hitachi Semiconductor
Description 2SC2979
Published Mar 7, 2015
Detailed Description 2SC2979 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 2...
Datasheet PDF File C2979 PDF File

C2979
C2979

Overview
2SC2979 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) IB PC * 1 Tj Tstg 1.
Base 2.
Collector (Flange) 3.
Emitter Ratings 900 800 7 3 6 1.
5 40 150 –55 to +150 Unit V V V A A A W °C °C 2SC2979 Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol Min VCEO(sus) 800 VCEX(sus) 800...


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