Silicon PNP Power Transistor - INCHANGE
Description
isc Silicon PNP Power Transistor
2SB1038
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.
) ·Low Collector Saturation Voltage
: VCE(sat)= -1.
5V(Max)@IC= -2A ·Complement to Type 2SD1310 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-5
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.
6
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.
iscsemi.
com
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isc Silicon PNP Power Transistor
2SB1038
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.
2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.
2A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -50mA; VCE= -5V
hFE-2
DC Current Gain
IC= -0.
5A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.
1A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
MIN TYP.
MAX UNIT
-60
V
-1.
5
V
-2.
0
V
-10 μA
-10 μA
20
40
200
20
MHz
70
pF
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or...
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