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VS-GT100TP60N

Vishay
Part Number VS-GT100TP60N
Manufacturer Vishay
Description Half Bridge IGBT
Published Mar 2, 2015
Detailed Description www.vishay.com VS-GT100TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A INT-A-PAK PRIMARY CHA...
Datasheet PDF File VS-GT100TP60N PDF File

VS-GT100TP60N
VS-GT100TP60N

Overview
www.
vishay.
com VS-GT100TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC at TC = 80 °C VCE(on) (typical) at IC = 100 A, 25 °C Speed 600 V 100 A 1.
65 V 8 kHz to 30 kHz Package INT-A-PAK Circuit configuration Half bridge FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (direct copper bonding) technology • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPI...


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