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VS-GT50TP60N

Part Number	VS-GT50TP60N
Manufacturer	Vishay
Description	Half-Bridge IGBT
Published	Mar 2, 2015
Detailed Description	www.vishay.com VS-GT50TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A INT-A-PAK FEATURES • Lo...
Datasheet	VS-GT50TP60N PDF File

Overview

www.
vishay.
com VS-GT50TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A INT-A-PAK FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 50 A, 25 °C 600 V 50 A 1.
65 V TYPICAL APPLICATIONS • UPS (Uninterruptable Power Supply) • Electronic welders • Switching mod...

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VS-GT50TP60N Half-Bridge IGBT - Vishay

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