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D1187

Inchange Semiconductor
Part Number D1187
Manufacturer Inchange Semiconductor
Published Feb 22, 2015
Description 2SD1187
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1187 DESCRIPTION ·Collector-Emitt...
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D1187
D1187


Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.
5V(Max.
) @ IC= 6A ·High Power Dissipation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 10 A IBB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2A 80 W 150 ℃ -55~150 ℃ isc Website：www.
iscsemi.
cn Free Datasheet http://www.
datasheet4u.
com/ INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1187 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 0.
3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB=B 0.
3A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.
5 V 1.
4 V 10 μA 10 μA hFE-1 DC Current Gain IC= 1A; VCE= 1V 70 240 hFE-2 DC Current Gain IC= 6A; VCE= 1V 30 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.
0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 4V 350 pF 10 MHz Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IB1= -IB2= 0.
3A; RL= 5Ω; VCC= 30V; PW=20μs; Duty Cycle≤1% 0.
5 μs 2.
5 μs 0.
8 μs ‹ hFE-1 Classifications OY 70-140 120-240 isc Website：www.
iscsemi.
cn 2 Free Datasheet http://www.
datasheet4u.
com/ ...


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