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B992

INCHANGE
Part Number B992
Manufacturer INCHANGE
Description 2SB992
Published Feb 22, 2015
Detailed Description INCHANGE Semiconductor isc Silicon PNP Power Transistor Product Specification 2SB992 DESCRIPTION ·Collector-Emitter Br...
Datasheet PDF File B992 PDF File

B992
B992

Overview
INCHANGE Semiconductor isc Silicon PNP Power Transistor Product Specification 2SB992 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -0.
5V(Max)@ IC= -4A ·Complement to Type 2SD1362 APPLICATIONS ·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -1 A 1.
5 W 40 150 ℃ -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon PNP Power Transistor Product Specification 2SB992 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.
4A VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.
4A ICBO Collector Cutoff Current VCB= -100V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -1V hFE-2 DC Current Gain IC= -4A; VCE= -1V COB Output Capacitance fT Current-Gain—Bandwidth Product Switching Times IE= 0; VCB= -10V; ftest= 1MHz IC= -1A; VCE= -4V ton Turn-on Time tstg Storage Time tf Fall Time VCC= -30V, RL= 10Ω, IB1= -IB2= -0.
3A, MIN TYP.
MAX UNIT -80 V -0.
5 V -1.
4 V -5 μA -5 μA 70 240 30 250 pF 10 MHz 0.
4 μs 2.
5 μs 0.
5 μs  hFE-1 Classifications OY 70-140 120-240 isc website：www.
iscsemi.
cn 2 ...


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