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TPC8214-H

Toshiba Semiconductor
Part Number TPC8214-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Feb 22, 2015
Detailed Description TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8214-H High-Efficie...
Datasheet PDF File TPC8214-H PDF File

TPC8214-H
TPC8214-H

Overview
TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8214-H High-Efficiency DC／DC Converter Applications CCFL Inverters Unit: mm • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 2.
0 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.
) • High forward transfer admittance: |Yfs| =5.
4 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) • Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC Pulse (Note 1) (Note 1) Drain power dissipation Single-device operation (Note 3a) (t = 10 s) Single-device value (Note 2a) at dual operation (Note 3b) Drain power dissipation Single-device operation (Note 3a) (t = 10 s) Single-device value (Note 2b) at dual operation (Note 3b) Single-pul...


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