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RF1S630SM

Fairchild Semiconductor
Part Number RF1S630SM
Manufacturer Fairchild Semiconductor
Description N-Channel Power MOSFETs
Published Feb 22, 2015
Detailed Description Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement...
Datasheet PDF File RF1S630SM PDF File

RF1S630SM
RF1S630SM

Overview
Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.
400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17412.
Ordering Information PART NUMBER PACKAGE BRAND IRF630 TO-220AB IRF630 RF1S630SM TO-263AB RF1S630 NOTE: When ordering, use the entire part number.
Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.
e.
, RF1S630SM9A.
Features • 9A, 200V • rDS(ON) = 0.
400Ω • Single Pulse Avalanche Energy Rated • SOA is...


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