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F2N60

Red Diamond Optoelectronics
Part Number F2N60
Manufacturer Red Diamond Optoelectronics
Description N-CHANNEL POWER MOSFET
Published Feb 22, 2015
Detailed Description F2N60 N- MOS /N-CHANNEL POWER MOSFET ◆: ◇Applications:Electronic Ballast Electronic Transformer Switch Mode Power S...
Datasheet PDF File F2N60 PDF File

F2N60
F2N60

Overview
F2N60 N- MOS /N-CHANNEL POWER MOSFET ◆: ◇Applications:Electronic Ballast Electronic Transformer Switch Mode Power Supply ◆: RoHS ◇Features:Low Thermal Resistance High Speed Switching High Input Resistance RoHS Compliant TO-220 :mm ◆(Tc=25℃) ◇Absolute Maximum Ratings(Tc=25℃) Parameter - Drain-Source Voltage - Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Storage Temperature Symbol VDS VGS ID TC=25℃ TC=100℃ PD Tj Tstg Value 600 ±20 2.
4 1.
5 64 150 -55～150 Unit V V A W ℃ ℃ 0.
1 123 ◆(Tc=25℃) 1-Gate 2-Drain 3-Source ◇Electronic Characteristics(Tc=25℃) Charcteristics - Drain-Source Breakdown Voltage Gate Threshold Voltage - Drain-Source Leakage Current On State Drain Current Gate-Body Leakage Current (VDS=0) - Static Drain-Source On Resistance - Thermal Resistance Junction-Case Symbol BVDSS VGS(TH) IDSS ID(ON) IGSS RDS(ON) RθJC Test Condition VGS=0,ID=250μA VGS=VDS,ID=250μA VDS=Rated BVDSS VGS=0 VDS=0.
...


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