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F2N60

Pan Jit International
Part Number F2N60
Manufacturer Pan Jit International
Description PJF2N60
Published Feb 22, 2015
Detailed Description PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A TO-220AB / ...
Datasheet PDF File F2N60 PDF File

F2N60
F2N60

Overview
PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS(ON)=4.
6Ω@VGS=10V, ID=1A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives 3 1 2 S D G ITO-220AB 1 2 G 3 D S MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 ORDERING INFORMATION INTERNAL SCHEMATIC DIAGRAM Drain TYPE PJP2N60 PJF2N60 MARKING P2N60 F2N60 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R Symbol PJP2N60 PJF2N60 Drain-Source Voltage V DS Gate-Source Voltage V GS Continuous Drain Current ID Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TA= 2 5 OC IDM PD Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e Avalanche Energy with Single Pulse IAS=2.
0A, VDD=50V, L=56mH Junction-to-Case Thermal Resistance TJ,TSTG E AS RθJC Junction-to Ambient Thermal Resistance RθJA 600 +30 22 88 45 0.
36 20 0.
16 -55 to +150 120 2.
78 6.
25 62.
5 100 Note : 1.
Maximum DC current limited by the package Uni ts V V A A W OC mJ OC /W OC /W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-NOV.
24.
2009 PAGE .
1 PJP2N60 / PJF2N60 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) Parameter Static Symbol Te s t C o nd i ti o n Drain-Source Breakdown Voltag e Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain C urre nt Gate Body Leakage Dynamic B V DSS V GS(th) R D S ( o n) I DSS I GSS VGS=0V, I D=250uA VDS=VGS, I D=250uA VGS= 10V, I D= 1A VDS=600V, VGS=0V VGS=+30V, VDS=0V To ta l Ga te C ha rg e Gate-Source Charge Gate-Drain Charge Turn-On D e la y Ti me Tu...


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