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FGW40N120VD

Fuji Electric
Part Number FGW40N120VD
Manufacturer Fuji Electric
Description Discrete IGBT
Published Feb 22, 2015
Detailed Description http://www.fujielectric.com/products/semiconductor/ FGW40N120VD Discrete IGBT Discrete IGBT (High-Speed V series) 120...
Datasheet PDF File FGW40N120VD PDF File

FGW40N120VD
FGW40N120VD

Overview
http://www.
fujielectric.
com/products/semiconductor/ FGW40N120VD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 40A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.
) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Equivalent circuit Items Collector-Emitter voltage Gate-Emitter voltage DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current Symbols VCES VGES IC@25 IC@100 ICP - IF@25 IF@100 IFP Short Circuit Withstand Time tSC IGBT Max.
Power Dissipation PD_IGBT FWD Max.
Power Dissipation PD_FWD Operating Junction Temperature Tj Storage Temperature Tstg Characteristics 1200 ±20 63 40 80 80 58 30 80 10 340 220 -40~+175 -55~+175 Units Remarks V V A TC=25°C, Tj=150°C A TC=100°C, Tj=150°C A Note *1 A VCE≤1200V, Tj≤175°C A A A Note *1 μs VCC≤640V, VGE=15V Tj≤150°C W TC=25°C TC=25°C °C °C Gate Collector Emitter Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Collector-Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Forward Voltage Drop Diode Reverse Recovery Time Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbols V(BR)CES ICES IGES VGE (th) VCE (sat) Cies Coes Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff VF trr1 trr2 Qrr Conditions IC = 50μA, VGE = 0V VCE = 1200V, VGE = 0V Tj=25°C Tj=175°C V...


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