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FGW50N60HD

Fuji Electric
Part Number FGW50N60HD
Manufacturer Fuji Electric
Description Discrete IGBT
Published Feb 22, 2015
Detailed Description http://www.fujielectric.com/products/semiconductor/ FGW50N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V...
Datasheet PDF File FGW50N60HD PDF File

FGW50N60HD
FGW50N60HD

Overview
http://www.
fujielectric.
com/products/semiconductor/ FGW50N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.
) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Equivalent circuit Items Collector-Emitter Voltage Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current Short Circuit Withstand Time IGBT Max.
Power Dissipation FWD Max.
Power Dissipation Operating Junction Temperature Storage Temperature Symbols VCES VGES IC@25 IC@100 ICP IF@25 IF@100 IFP tSC PD_IGBT PD_FWD Tj Tstg Characteristics 600 ±20 95 50 150 150 43 25 150 5 360 125 -40 ~ +175 -55 ~ +175 Units Remarks V V A TC=25°C,Tj=150°C A TC=100°C,Tj=150°C A Note *1 A VCE≤600V,Tj≤175°C A A A Note *1 µs VCC≤300V,VGE=12V Tj≤150°C W TC=25°C TC=25°C °C °C Gate Collector Emitter Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Collector-Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Symbols V(BR)CES ICES IGES VGE (th) VCE (sat) Cies Coes Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Conditions IC = 250μA, VGE = 0V VCE = 600V, VGE = 0V Tj=25°C Tj=175°C VCE = 0V, VGE = ±20V VCE = +20V, IC = 50mA VGE = +15V, IC = 50A Tj=25°C Tj=175°C VCE=25V VGE=0V f=1MHz VCC = 400V IC = 50A VGE = 15V T...


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