DatasheetsPDF.com

2SJ133

NEC
Part Number 2SJ133
Manufacturer NEC
Description P-Channel Power MOSFET
Published Feb 22, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate dr...
Datasheet PDF File 2SJ133 PDF File

2SJ133
2SJ133

Overview
DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (VGS = –4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.
45 Ω) • 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC.
QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No.
C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Conditions Drain to source voltage VDSS VGS = 0 Gate to source voltage VGSS VDS = 0 Drain current (DC) Drain current (pulse) ID(DC) ID(pulse) TC = 25°C PW ≤ 300 µs duty cycle ≤ 10 % Total power dissipation PT TC = 25°C Total power dissipation PT Ta = 25°C Channel temperature Tch Storage temperature Tstg * Printing board mounted ** 7.
5 cm2 × 0.
7 mm ceramic board mounted ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)