DatasheetsPDF.com

A1150

Toshiba Semiconductor
Part Number A1150
Manufacturer Toshiba Semiconductor
Description 2SA1150
Published Feb 22, 2015
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit...
Datasheet PDF File A1150 PDF File

A1150
A1150

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm • High hFE: hFE = 100~320 • Complementary to 2SC2710.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitter voltage VCEO −30 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −160 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in JEDEC JEITA ― ― temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
TOSHIBA 2-4E1A operating temperature/current/voltage, etc.
) are within the Weight: 0.
13 g (typ.
) absolute maximum ratings.
Please design the appropriate reliability upon re...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)