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D726

Part Number	D726
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Feb 14, 2015
Detailed Description	INCHANGE Semiconductor isc Silicon NPNPower Transistor isc Product Specification 2SD726 DESCRIPTION ·Collector-Emitter...
Datasheet	D726 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPNPower Transistor isc Product Specification 2SD726 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High Power Dissipation ·Complement to Type 2SB690 APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.
cnSYMBOL PARAMETER VALUE UNIT .
iscsemVCBO Collector-Base Voltage 100 V wwwVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 4A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 8A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：www.
iscsemi.
cn INCHANGE Semicon...

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