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2SD726

Part Number	2SD726
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Feb 14, 2015
Detailed Description	isc Silicon NPNPower Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High Power Dis...
Datasheet	2SD726 PDF File

Overview

isc Silicon NPNPower Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High Power Dissipation ·Complement to Type 2SB690 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD726 isc web...

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