DatasheetsPDF.com

K13A65U

Toshiba Semiconductor
Part Number K13A65U
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Feb 14, 2015
Detailed Description TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Application...
Datasheet PDF File K13A65U PDF File

K13A65U
K13A65U

Overview
TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.
32 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 8.
0 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VGSS ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)