Power MOSFET - IXYS Corporation
Description
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T IXTP130N10T
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.
1mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263
Maximum Ratings
100 100
± 30
130 75
350
65 500
360
-55 .
.
.
+175 175
-55 .
.
.
+175
300 260
1.
13 / 10
3.
0 2.
5
V V
V
A A A
A mJ
W
°C °C °C
°C °C
Nm/lb.
in.
g g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
Characteristic Values Min.
Typ.
Max.
100
V
2.
5 4.
5 V
± 200 nA
5 μA 250 μA
9.
1 mΩ
G S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate D = Drain S = Source TAB = Drain
Features
z Ultra-low On Resistance z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect z 175 °C Operating Temperature
Advantages
z Easy to mount z Space savings z High power density
Applications
z Automotive - Motor Drives - 42V Power Bus - ABS Systems
z DC/DC Converters and Off-line UPS z Primary Switch for 24V and 48V
Systems z Distributed Power Architechtures
and VRMs z Electronic Valve Train Systems z High Current Switching
Applications z High Voltage Synchronous Recifier
© 2008 IXYS CORPORATION, All rights reserved
DS99649B(07/08)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs VDS= 10V, ID = 60A, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.
5 • VDSS, ID = 25A RG = 5Ω (External)
Qg(on) Qgs Qgd
VGS= 10V, VDS = 0.
5 • VDSS, ID = 25A
RthJC RthCH
TO-220
Source-Dra...
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