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2SC3527

Part Number	2SC3527
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Feb 9, 2015
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·High Collector Current ·Good Linearity ...
Datasheet	2SC3527 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·High Collector Current ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and high voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 6 A 100 W...

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