2SC1980 - Panasonic Semiconductor
Description
Transistors
2SC1980
Silicon NPN epitaxial planar type
For high breakdown voltage low-noise amplification Complementary to 2SA0921
5.
0±0.
2
Unit: mm 4.
0±0.
2
5.
1±0.
2
■ Features
• High collector-emitter voltage (Base open) VCEO
• Low noise voltage NV
0.
7±0.
1
■ Absolute Maximum Ratings Ta = 25°C
0.
7±0.
2 12.
9±0.
5
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
120
V
c type Collector-emitter voltage (Base open) VCEO
120
V
n d ge.
ed Emitter-base voltage (Collector open) VEBO
7
2.
3±0.
2
V
le sta ntinu Collector current
IC
20
mA
a e cyc isco Peak collector current
ICP
50
mA
life d, d Collector power dissipation
PC
250
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg −55 to +150 °C
0.
45+–00.
.
115 2.
5+–00.
.
26
2.
5+–00.
.
26
0.
45+–00.
.
115
1 23
1: Emitter 2: Collector 3: Base TO-92-B1 Package
in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
120
V
tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
120
V
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.
1
µA
D anc typ Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
1
µA
inten ance Forward current transfer ratio *
hFE VCE = 5 V, IC = 2 mA
180
700
Ma inten Collector-emitter saturation voltage
VCE(sat) IC = 20 mA, IB = 2 mA
0.
6
V
ma Transition frequency
fT
VCB = 5 V, IE = −2 mA, f = 200 MHz
200
MHz
(planed Noise voltage
NV VCE = 40 V, IC = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT
150 mV
Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification
Rank
R
S
T
hFE
180 to 360 260 to 520 ...
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