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2SK4075

NEC
Part Number 2SK4075
Manufacturer NEC
Description MOS FIELD EFFECT TRANSISTOR
Published Jan 21, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel M...
Datasheet PDF File 2SK4075 PDF File

2SK4075
2SK4075

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications.
ORDERING INFORMATION PART NUMBER LEAD PLATING 2SK4075-ZK-E1-AY Pure Sn (Tin) 2SK4075-ZK-E2-AY PACKING Tape 2500 p/reel PACKAGE TO-252 (MP-3ZK) typ.
0.
27 g FEATURES • Low on-state resistance RDS(on)1 = 6.
7 mΩ MAX.
(VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX.
(VGS = 4.
5 V, ID = 15 A) • Low Ciss: Ciss = 2900 pF TYP.
• Logic level drive type ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±60 ±180 A A Total Power Dissipation (TC = 25°C) PT1 52 W Total Power Dissipation (TA = 25°C) PT2 1.
0 W Channel Temperature Tch 150 °C Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg –55 to +150 °C IAS 28 A EAS 78 mJ Notes 1.
PW ≤ 10 μs, Duty Cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 2.
4 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W (TO-252) The information in this document is subject to change without notice.
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Document No.
D18223EJ2V0DS00 (2nd edition) Date Published September 2006 NS CP(K) Printed in Japan The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2006 2SK4075 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V Gate ...


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