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H11G1

Motorola Inc
Part Number H11G1
Manufacturer Motorola Inc
Description 6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors)
Published Mar 23, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11G1/D H11G1 * GlobalOptoisolator™ [CTR = 1000% Min] 6...
Datasheet PDF File H11G1 PDF File

H11G1
H11G1


Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11G1/D H11G1 * GlobalOptoisolator™ [CTR = 1000% Min] 6-Pin DIP Optoisolators Darlington Output (On-Chip Resistors) The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral base–emitter resistors.
The on–chip resistors improve higher temperature leakage characteristics.
Designed with high isolation, high CTR, high voltage and low leakage, they provide excellent performance.
• High CTR, H11G1 & H11G2 — 1000% (@ IF = 10 mA), 500% (@ IF = 1 mA) • High V(BR)CEO, H11G1 — 100 Volts, H11G2 — 80 Volts • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number.
VDE 0884 is a test option.
Applications • Interfacing and coupling systems of different potentials and impedances • Phase and Feedback Controls • General Purpose Switching Circuits • Solid State Relays MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous Forward Current — Peak Pulse Width = 300 µs, 2% Duty Cycle LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT DETECTOR Collector–Emitter Voltage H11G1 H11G2 H11G3 VCEO 100 80 55 7 150 150 1.
76 Volts VR IF IF PD 6 60 3 120 1.
41 Volts mA Amps mW mW/°C 3 2 Symbol Value Unit 1 H11G2* [CTR = 1000% Min] H11G3 [CTR = 200% Min] *Motorola Preferred Devices STYLE 1 PLASTIC 6 1 STANDARD THRU HOLE CASE 730A–04 SCHEMATIC 6 5 4 PIN 1.
2.
3.
4.
5.
6.
ANODE CATHODE N.
C.
EMITTER COLLECTOR BASE Emitter–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Total Device Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 s) Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) VEBO IC PD Volts mA mW mW/°C PD TA Tstg TL VISO 250 ...


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