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H11A817B

QT Optoelectronics
Part Number H11A817B
Manufacturer QT Optoelectronics
Description 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
Published Mar 23, 2005
Detailed Description 4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics ...
Datasheet PDF File H11A817B PDF File

H11A817B
H11A817B

Overview
4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.
.
380 (9.
64) MAX .
012 (.
30) .
007 (.
20) .
055 (1.
40) .
047 (1.
20) 4 3 .
270 (6.
86) .
248 (6.
30) .
327 (8.
30) MAX .
300 (7.
62) MIN The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
1 2 .
187 (4.
75) .
175 (4.
45) FEATURES 0 to 15° s s .
200 (5.
10) MAX .
158 (4.
01) .
144 (3.
68) .
020 (.
51) MIN .
154 (3.
90) .
120 (3.
05) Compact 4-pin package Current transfer ratio in selected groups: H11AA814: 20-300% H11AA814A: 50-150% H11A817: H11A817A: H11A817B: H11A817C: H11A817D: 50-600% 80-160% 130-260% 200-400% 300-600% .
022 (.
56) .
015 (.
40) .
100 (2.
54) TYP APPLICATIONS 1 4 COLLECTOR ANODE 1 4 COLLECTOR 2 3 EMITTER ...


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