Silicon NPN Transistor - INCHANGE
Description
isc Silicon NPN Transistor
DESCRIPTION ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio power amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Curren
IB
Base Curren
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
2SC2120
VALUE
UNIT
35
V
30
V
5
V
800
mA
160
mA
600
mW
150
℃
-55~150
℃
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iscsemi.
cn
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isc Silicon NPN Transistor
2SC2120
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA ; IB= 20mA
VBE(on) Base-Emitter On Voltage
IC= 10mA ; VCE= 1V
ICBO
Emitter Cutoff Current
VCB= 35V; IE= 0
IEBO
Collector Cutoff Current
VEB= 5V; IC= 0
hFE(1)
DC Current Gain
IC= 0.
1A ; VCE= 1V
hFE(2)
DC Current Gain
IC= 0.
7A ; VCE= 1V
fT
Current-Gain—Bandwidth Product
IC= 10mA; VCE= 5V; f= 100MHz
Cob
Collector Output Capacitance
VCB=10V; IE=0; f=1MHz
MIN TYP.
MAX UNIT
30
V
0.
5
V
0.
5
0.
8
V
0.
1 μA
0.
1 μA
100
320
35
120
MHz
13
pF
hFE(1) Classifications
O
Y
100-200 160-320
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
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