NPN Plastic Encapsulated Transistor - SeCoS
Description
Elektronische Bauelemente
2SC2120
0.
8 A , 35 V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain Complementary to 2SA950
CLASSIFICATION OF hFE
Product-Rank 2SC2120-O
Range
100~200
2SC2120-Y 160~320
TO-92
GH
J AD
B K
E CF
1Emitter 2Collector 3Base
REF.
A B C D E F G H J K
Millimeter
Min.
Max.
4.
40 4.
70
4.
30 4.
70
12.
70
-
3.
30 3.
81
0.
36 0.
56
0.
36 0.
51
1.
27 TYP.
1.
10
-
2.
42 2.
66
0.
36 0.
76
Collector
2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature
VCBO VCEO VEBO
IC PC RθJA TJ, TSTG
35 30 5 0.
8 0.
6 208 150, -55~150
3
Base
1
Emitter
Unit
V V V A W °C / W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter voltage Collector Output Capacitance Transition Frequency
V(BR)CBO
35
-
-
V IC=0.
1mA, IE=0
V(BR)CEO
30
-
-
V IC=10mA, IB=0
V(BR)EBO
5
-
-
V IE=0.
1mA, IC=0
ICBO - - 0.
1 µA VCB=35V, IE=0
ICEO - - 0.
1 µA VCE=25V, IB=0
IEBO - - 0.
1 µA VEB=5V, IC=0
hFE 100 - 320
VCE=1V, IC=100mA
VCE(sat) - - 0.
5 V IC=500mA, IB=20mA
VBE - - 0.
8 V VCE=1V, IC=10mA
Cob - - 13 pF VCB=10V, IE=0, f=1MHz
fT
100 -
- MHz VCE=5V, IC=10mA
http://www.
SeCoSGmbH.
com/
28-Jan-2011 Rev.
B
Any changes of specification will not be informed individually.
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Elektronische Bauelemente CHARACTERISTIC CURVES
2SC2120
0.
8 A , 35 V NPN Plastic Encapsulated Transistor
http://www.
SeCo...
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