NPN Transistor - JIANGSU CHANGJIANG
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-92 Plastic-Encapsulate Transistors
2SC2120 TRANSISTOR (NPN)
FEATURES z High DC Current Gain z Complementary to 2SA950
TO – 92
1.
EMITTER 2.
COLLECTOR 3.
BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value 35 30 5 0.
8 600 208 150
-55~+150
Unit V V V A
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO ICEO IEBO hFE VCE(sat) VBE Cob
fT
Test conditions IC= 0.
1mA,IE=0 IC=10mA,IB=0 IE=0.
1mA,IC=0 VCB=35V,IE=0 VCE=25V,IB=0 VEB=5V,IC=0 VCE=1V, IC=100mA IC=500mA,IB=20mA VCE=1V, IC=10mA VCB=10V,IE=0, f=1MHz VCE=5V,IC=10mA
Min Typ Max Unit 35 V 30 V 5V
0.
1 μA 0.
1 μA 0.
1 μA 100 320 0.
5 V 0.
8 V 13 pF 100 MHz
CLASSIFICATION OF hFE
RANK RANGE
O 100-200
Y 160-320
B,Dec,2011
Typical Characterisitics
2SC2120
COLLECTOR CURRENT IC (mA)
Static Characteristic
200
1mA 900uA 800uA
160 700uA 600uA
120 500uA
COMMON EMITTER Ta=25℃
400uA 80 300uA
200uA
40
IB=100uA
0 0.
0 0.
4 0.
8 1.
2 1.
6 2.
0
COLLECTOR-EMITTER VOLTAGE VCE (V)
V —— I
600
CEsat
C
β=25
300
100
Ta=100℃ Ta=25℃
30
DC CURRENT GAIN hFE
h —— I
1000
FE C
COMMON EMITTER
VCE=1V
Ta=100℃
Ta=25℃
100
10 13
10 30
100 300 800
COLLECTOR CURRENT IC (mA)
V —— I
BEsat
C
2
β=25
1
Ta=25℃
Ta=100℃
BASE-EMITTER SATURATION VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)
COLLECTOR CURRENT IC (mA)
10 13
10 30
100...
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